UTBI: Under The Background Influence


Desarrollo

 

 

El detector utilizado

The instrument is based on a COST Semi-Insulating Cadmium Zinc Telluride (CdZnTe) detector grown by the High-Pressure Electro-Dynamic Gradient (HP-EDG) technique. The crystal volume is 15x15x7.5 mm3 and with a Co-Planar Grid (CPG) electrode configuration. The Analog Front End Electronics (AFEE) is integrated in a commercial ASIC for noise reduction purpose and designed for a large energy range (30 keV-6 MeV).


 


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